UGC NET ELECTRONICS MODULE 2

Description

IC fabrication – crystal growth, epitaxy, oxidation, lithography, doping, etching, isolation methods, metallization, bonding, Thin film deposition, and characterization Techniques: XRD, TEM, SEM, EDX, Thin-film active and passive devices, MOS technology and VLSI, scaling of MOS devices, NMOS and CMOS structures and fabrication, Characteristics of MOS transistors and threshold voltage, NMOS and CMOS inverters, Charge-Coupled Device (CCD) – structure, charge storage, and transfer, Basics of VLSI design, stick diagrams, Layout design rules

 

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